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| VP2410L P-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) -240 rDS(on) Max (W) 10 @ VGS = -4.5 V VGS(th) (V) -0.8 to -2.5 ID (A) -0.18 Features D D D D D High-Side Switching Secondary Breakdown Free: -255 V Low On-Resistance: 8 W Low-Power/Voltage Driven Excellent Thermal Stability Benefits D D D D D Ease in Driving Switches Full-Voltage Operation Low Offset Voltage Easily Driven Without Buffer No High-Temperature "Run-Away" Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Power Supply, Converters D Motor Control D Switches TO-226AA (TO-92) S 1 G 2 D 3 Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limits -240 "20 -0.18 -0.11 -0.72 0.8 0.32 156 -55 to 150 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. W _C/W _C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70211. Siliconix S-52426--Rev. C, 14-Apr-97 1 VP2410L Specificationsa Limits Parameter Static Drain-Source Drain Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -5 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = -1 mA Gate-Threshold Gate Threshold Voltage VGS(th) VDS = VGS, ID = -2.5 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = -180 V, VGS = 0 V TJ = 125_C VDS = -10 V, VGS = -4.5 V VGS = -10 V, ID = -0.1 A Drain-Source On-Resistancec rDS(on) VGS = -4.5 V, ID = -0.1 A TJ = 125_C Forward Transconductance c Conductancec gfs gos VDS = -10 V, ID = -0.1 A VDS = -10 V, ID = -0.05 A 125 -150 -300 6 8 14.5 175 0.125 mS 10 20 W -0.8 -240 -255 -255 -2.1 -2.2 -2.5 "10 "50 -1 -100 nA V Symbol Test Conditions Min Typb Max Unit Gate-Body Gate Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Currentc IDSS ID(on) mA mA Common Source Output Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS =-25 V VGS = 0 V 25 V, f = 1 MHz 65 25 12 95 30 15 pF Switchingd tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = -25 V, RL = 250 W ID ^ -0 1 A VGEN = -10 V -0.1 A, RG = 25 W 25 7 18 90 45 45 70 60 VPDV24 15 30 ns 2 Siliconix S-52426--Rev. C, 14-Apr-97 VP2410L Typical Characteristics (25_C Unless Otherwise Noted) -500 Ohmic Region Characteristics TJ = 25_C -5 V -100 Output Characteristics for Low Gate Drive TJ = 25_C I D - Drain Current (mA) -400 VGS = -10 V I D - Drain Current (mA) -4.5 V -80 VGS = -4 V -3.6 V -3.4 V -300 -4 V -200 -60 -40 -3.0 V -20 -3.2 V -100 -3 V 0 0 -1 -2 -3 -4 -5 VDS - Drain-to-Source Voltage (V) -500 -2.8 V -2.6 V 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 VDS - Drain-to-Source Voltage (V) 14 12 rDS(on) - On-Resistance (W ) 10 8 ID = -0.20 A 6 ID = -0.1 A 4 2 Transfer Characteristics VDS = 15 V On-Resistance vs. Gate-to-Source Voltage TJ = 25_C -400 I D - Drain Current (mA) TJ = -55_C 25_C 125_C -300 -200 -100 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 16 rDS(on) - Drain-Source On-Resistance (W ) On-Resistance vs. Drain Current rDS(on) - Drain-Source On-Resistance (Normalized) VGS = -4.5 V TJ = 25_C 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 Normalized On-Resistance vs. Junction Temperature 14 VGS = -10 V ID = -0.2 A 12 10 VGS = -4.5 V ID = -0.1 A 8 6 0 -100 -200 -300 -400 -500 ID - Drain Current (A) -10 20 70 110 150 TJ - Junction Temperature (_C) Siliconix S-52426--Rev. C, 14-Apr-97 3 VP2410L Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd) -10 Threshold Region 150 125 Capacitance VGS = 0 V f = 1 MHz I D - Drain Current (mA) TJ = 150_C C - Capacitance (pF) -1 125_C 25_C 100 Ciss 75 50 25 -0.01 0 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 VGS - Gate-to-Source Voltage (V) 0 0 -10 -20 -30 -40 -50 VDS - Drain-to-Source Voltage (V) Coss Crss -0.1 -55_C -12 VGS - Gate-to-Source Voltage (V) -10 -8 ID = -100 mA Gate Charge 100 Load Condition Effects on Switching td(off) t - Switching Time (ns) tf tr 10 td(on) VDS = -120 V -6 -4 -192 V -2 0 0 100 200 300 400 500 Qg - Total Gate Charge (pC) VDD = -25 V RG = 25 W VGS = 0 to -10 V 1 -10 -100 ID - Drain Current (A) -1000 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) 4 Siliconix S-52426--Rev. C, 14-Apr-97 |
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